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Secondary protection for DSL lines. Philips Semiconductors, 6F, No. Product data sheet Supersedes data of Jan General description NPN general-purpose transistors.
Characteristic Symbol Rating Unit. High surge current capability. Easy pick and place. Low voltage PNP power transistor. Designed for use in general purpose power amplifier and switching applications.
BF Datasheet(PDF) – Continental Device India Limited
Application information Where application information is given, it is advisory and does not form part of the specification. High voltage fast-switching NPN power transistor. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
Product specification Supersedes data of Aug BoxTelFax Belarus: Quick reference data Rev.
To make this website work, we log user data and share it with processors. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with.
Product specification Supersedes data of Sep Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product data sheet Supersedes data of Oct They are designed for high speed More information. Designed for general-purpose amplifier and low speed switching applications.
BF459 NPN High Voltage Transistor
Rosaline Carr 1 years ago Views: Product specification Supersedes data of Dec 06″. Metal to silicon rectifier, majority carrier conduction. NPN general-purpose transistors in small plastic packages.
BF (Siemens) – NPN SILICON RF TRANSISTORS | eet
This data sheet contains final product specifications. Product specification Supersedes data of Dec NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with More information.
N-channel enhancement mode field-effect transistor Rev.
These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied.
Suitable for applications requiring low noise and good h FE linearity, eg.
(PDF) BF459 Datasheet download
Description in a plastic package using TrenchMOS technology. Product overview Type number More information. NPN medium power transistor. They are designed for high speed.
High oltage Switching Features: